Presentation

2018

  1. W. H. Han, Sunghyun Kim, In-Ho Lee, and K. J. Chang, “A new phase of phosphoruse: green phosphorus with direct band gap and high mobility”(Poster), The 34th International Conference on the Physics of Semiconductors (ICPS), Montpellier, France, [August, 1, 2018]
  2. W. H. Han, Sunghyun Kim, In-Ho Lee, and K. J. Chang, “A new phosphorus allotrope with direct band gap and high mobility”(Oral), The 19th International Symposium on the Physics of Semiconductors and Applications (ISPSA), Jeju, Korea, [July, 4, 2018]
  3. W. H. Han, Sunghyun Kim, In-Ho Lee, and K. J. Chang, “Green phosphorus with tunable direct band gap and high electron mobility”(Poster), The 14th KIAS Electronic Structure Calculation Workshop, Seoul, Korea, [June, 21, 2018]
  4. W. H. Han, Sunghyun Kim, In-Ho Lee, and K. J. Chang, “Strong electron-phonon coupling and flat band ferromagnetism in hole-doped boron triangular Kagome lattice”(Oral), 2018 Korean Physics Society spring meeting, Daejeon, Korea [Apr, 25-27, 2018]
  5. W. H. Han, Sunghyun Kim, In-Ho Lee and K. J. Chang, “Prediction of a new phosphorus allotrope with tunable direct band gap and high mobility”(Oral), 2018 APS March meeting, Los Angeles, California, USA [Mar, 5-9, 2018]

2017

  1. W. H. Han, In-Ho Lee, and K. J. Chang, “Novel Metastable Boron Allotrope as an Intermediate Phase on the Transition Pathway from α-B to γ-B”(Oral), 2017 ICAE, Jeju, Korea, [November, 22, 2017]
  2. W. H. Han, Sunghyun Kim, In-Ho Lee, and K. J. Chang, “A new phosphorus allotrope with tunable direct band gap and high mobility”(Poster), The 20th Asian Workshop on First-Principles Electronic Structure Calculations, Nanjing, China, [October, 31, 2017]
  3. W. H. Han, Sunghyun Kim, In-Ho Lee, and K. J. Chang, “A new phosphorus allotrope discovered by ab initio materials design”(Oral), 2017 Korean Physics Society fall meeting, Gyeongju, Korea, [October, 26, 2017]
  4. W. H. Han and K. J. Chang, “Subgap states due to undercoordinated cation defects in amorphous oxide semiconductors”(Poster), The 29th International Conference on Defects in Semiconductors, Matsue, Japan, [August, 3, 2017]
  5. W. H. Han, In-Ho Lee, and K. J. Chang, “Construction of high-dimensional potential energy surfaces for boron using artificial neural networks”(Poster), 2017 NANO KOREA, Ilsan, Korea, [July, 12, 2017]
  6. W. H. Han, In-Ho Lee, and K. J. Chang, “New metastable boron allotropes on the pressure-induced transition pathway from α-B to γ-B”(Poster), The 13th KIAS Electronic Structure Calculation Workshop, Seoul, Korea, [June, 15, 2017]
  7. W. H. Han, Sunghyun Kim, In-Ho Lee, and K. J. Chang, “Pressure-induced transition pathway from α-B to γ-B” (Oral), 2017 Korean Physics Society spring meeting, Daejeon, Korea [Apr, 19-21, 2017]
  8. W. H. Han, In-Ho Lee and K. J. Chang, “High-dimensional artificial neural network potentials for boron and its application to searching for new structures”(Oral), 2017 APS March meeting, New Orleans, Louisiana, USA [Mar, 13-17, 2017]

2016

  1. W. H. Han, In-Ho Lee, and K. J. Chang, “High-Dimensional Artificial Neural Network Potentials for Elemental Boron”(Poster), The 19th Asian Workshop on First-Principles Electronic Structure Calculations, Hsinchu, Taiwan, [Nov, 2, 2016]
  2. In-Ho Lee, W. H. Han, and K. J. Chang. “Generation of the neural network potential of elemental boron from machine learning”(Oral), 2016 Korean Physics Society Fall Meeting, Gwangju, Korea, [Oct, 19, 2016]
  3. W. H. Han and K. J. Chang, “Electronic structure of disorder-induced cation defects in amorphous oxide semiconductors”(Poster), The 33rd International Conference on the Physics of Semiconductors, Beijing, China, [Aug, 1, 2016]
  4. W. H. Han and K. J. Chang, “The atomic and electronic properties of coordination defects in amorphous oxide semiconductors”(Oral), The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA), Jeju, Korea, [July, 4, 2016]
  5. W. H. Han and K. J. Chang, “The electronic structure of undercoordinated cation defects in amorphous oxide semiconductors”(Poster), The 12th KIAS Electronic Structure Calculation Workshop, Seoul, Korea, [June, 16, 2016]
  6. W. H. Han and K. J. Chang, “Electronic structure of undercoordinated cation defects in amorphous oxide semiconductors”(ORAL), 2016 Korean Physics Society spring meeting, Daejeon, Korea [Apr, 20-22, 2016]
  7. W. H. Han and K. J. Chang, “Electronic structure of intrinsic defects in non-stoichiometric amorphous In-Ga-Zn-O semiconductors”(ORAL), 2016 APS March meeting, Baltimore, Maryland, USA [Mar, 15, 2016]

2015

  1. W. H. Han,Young Jun Oh, and K. J. Chang, “The electronic structure of oxygen-related defects in non-stoichiometric amorphous In-Ga-Zn-O”(Oral), The 3rd International Conference on Advanced Electromaterials, ICC Jeju, Korea [Nov, 17-20, 2015]
  2. W. H. Han and K. J. Chang, “Eletronic structure of non-stoichiometric amorphous In-Ga-Zn-O semiconductors”(Poster), The 18th Asian Workshop on First-Principles Electronic Structure Calculations, Kashiwa, Japan [Nov, 9-11, 2015]
  3. W. H. Han, Young Jun Oh, and Kee Joo Chang, “Atomic and electronic structure of non-stoichiometric amorphous In-Ga-Zn-O semiconductors”(Oral), 2015 Korean Physics Society fall meeting, Gyeongju, Korea [Oct, 21-23, 2015]
  4. W. H. Han, Young Jun Oh, and K. J. Chang, “Electronic structure of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors “(Poster), The 28th International Conference on Defects in Semiconductors, Espoo, Finland [July 27 – 31, 2015]
  5. W. H. Han, Young Jun Oh, and K. J. Chang, “A hybrid functional study of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(Oral), 2015 APS March meeting, San Antonio, TX, USA [Mar, 2, 2015]

2014

  1. W. H. Han, Young Jun Oh, and Kee Joo Chang, “The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(Oral), The 17th International Symposium Physics of semiconductors and Applications, Jeju, Korea [Dec, 7-11, 2014]
  2. W. H. Han, Young Jun Oh, and Kee Joo Chang, “The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(Poster), The 17th Asian Workshop on First-Principles Electronic Structure Calculations, Seoul, Korea [Nov, 3-5, 2014]
  3. W. H. Han, Young Jun Oh, and Kee Joo Chang, “Hybrid functional calculations for the capture process of electrons by oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(Oral), 2014 Korean Physics Society fall meeting, Gwangju, Korea [Oct, 22-24, 2014]
  4. Young Jun Oh, W. H. Han, Hyeon-Kyun Noh, and K. J. Chang, “Role of oxygen-related defects in the instability of amorphous In-Ga-Zn-O based thin film transistors”(Poster), The 32nd International Conference on the Physics of Semiconductors, Austin, TX, USA [Aug, 10-15, 2014]
  5. W. H. Han, Young Jun Oh, and Kee Joo Chang, “The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(Poster), The 10th KIAS Electronic Structure Calculation Workshop, Seoul, Korea [Jun, 19-20, 2014]
  6. W. H. Han, Young Jun Oh, and Kee Joo Chang, “The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(Oral), 2014 Korean Physics Society spring meeting, Deajeon, Korea [Apr, 23-25, 2014]
  7. W. H. Han, Young Jun Oh, and Kee Joo Chang, “The electronic properties of oxygen-related defects in amorphous In-Ga-Zn-O semiconductors”(Poster), 제10차 강유전체연합심포지엄, 무주, Korea [Feb, 16-17, 2014]