Woo Hyun Han (W.H.Han)

Ph.D in Physics, J.D. in Law
School of law, Seoul National University (SNU)
SNU, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea

Research interest

  1. Topological phononic system
  2. Inverse materials design combined with machine learning potentials
  3. Tunining Fermi level in bulk with several defects
  4. Electron-phonon interations in flat bands
  5. Non-trivial topological materials
  6. Inverse materials design for functional materials
  7. Defects in amorphous oxide semiconductors

Education

Research experience

Technical Skill

Honors & Awards

Honors

  1. Hanwha Scholarship, 2019
    Hanwha

  2. SNU Foundation Scholarship, 2019
    Seoul National University Foundation

  3. Pre-doctoral Fellow of Physics at KAIST, 2017
    Korea Advanced Institute of Science and Technology

  4. Global Ph.D Fellowship, 2013
    National Research Foundation of Korea

  5. Presidential Sceince Scholarship, 2010
    Korea Student Aid Foundation

Awards

  1. 특허법원장상(1등), 2019
    제6회 특허소송 변론대회, 특허법원

  2. Best Oral Presentation Award, 2017
    A new phosphorus allotrope discovered by ab initio materials design, The Korean Physical Society

  3. Best Oral Presenatation Award, 2017
    Pressure-induced transition pathway from alpha-B to gamma-B, The Korean Physical Society

  4. Best Oral Presentation Award, 2014
    The electronic properties of oxygen interstitial defects in a-IGZO, The Korean Physicsal Society

Teaching experience

Publications

2019

  1. W.H. Han, S. Kim, I.-H. Lee, and K.J. Chang, “A Metal-Insulator Transition via Wigner Crystallization in Boron Triangular Kagome Lattice” arXiv (2019)
  2. W.H. Han and K.J. Chang, “Quantum Spin Hall-like Phononic States in van der Waals Bilayers with Antiferromagnetic Ordering”, arXiv (2019)
  3. G.-M. Kim, H.-J. Sung, W.H. Han, I.-H. Lee, and K.J. Chang, “Self-Encapsulation of Silicene in Cubic Diamond Si: Topological Semimetal in Covalent Bonding Networks” J.Phys.Chem.C 123, 1839 (2019)
  4. M. Kim, J. Kim, I.-H Lee, W.H.Han, Y.C. Park, W.Y. Kim, B. Kim, and J. Suh “Quantum transport properties of single-crystalline Ag2Se0.5Te0.5 nanowire as a new topological material”, Nanoscale (2019)
  5. T. H. Lee, J. W. Shim, Y. W. Kim, H.-J. Sung, J. S. Goo, W. H. Han, K. J. Chang and T. G. Kim submitted (2019).

2018

  1. H.-J. Sung, W. H. Han, I.-H. Lee, and K. J. Chang, “Superconducting open-framework allotrope of silicon at ambient pressure”, Phys. Rev. Lett. 120, 157001 (2018)
  2. J.E. Wang, W.H. Han, K.J. Chang, Y.H. Jung, and D.K. Kim, “New insight into Na intercalation with Li substitution on alkali site and high performance of O3-type layered cathode material for sodium ion batteries” J. Mater. Chem. A 6, 22731 (2018).

2017

  1. W. H. Han, Y. J. Oh, D.-H. Choe, S. Kim, I.-H. Lee, K. J. Chang, “Three-dimensional buckled honeycomb boron lattice with vacancies as an intermediate phase on the transition pathway from α-B to γ-B.”, NPG Asia Materials 9, e400 (2017).
  2. S. Kim, W. H. Han, I.-H. Lee, K. J. Chang, “Boron Triangular Kagome Lattice with Half-Metallic Ferromagnetism”, Sci. Rep. 7, 7279 (2017).
  3. S. Cho, S. H. Kang, H. S. Yu, H. W. Kim, W. Ko, S. W. Hwang, W. H. Han, D.-H. Choe, K. J. Chang, Y. H. Lee, H. Yang, S. W. Kim, “Te vacancy-driven superconductivity in orthorhombic molybdenum ditelluride.”, 2D Mater. 4, 021030 (2017).
  4. W. H. Han, S. Kim, I.-H. Lee, K. J. Chang, Prediction of Green Phosphorus with Tunable Direct Band Gap and High Mobility”“, J. Phys. Chem. Lett. 8, 4627 (2017).

2016

  1. W. H. Han and K, J. Chang, “Subgap States near the Conduction-Band Edge Due to Undercoordinated Cations in Amorphous In-Ga-Zn-O and Zn-Sn-O Semiconductors”, Phys. Rev. Applied 6, 044011 (2016).

2015

  1. W. H. Han, Young Jun Oh, Ji-Sang Park, and K. J. Chang, “Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior”, Phys. Rev. Applied. 3, 044008. (2015).