Publications

Publications

2019

  1. W.H. Han, S. Kim, I.-H. Lee, and K.J. Chang, “A Metal-Insulator Transition via Wigner Crystallization in Boron Triangular Kagome Lattice” arXiv (2019)
  2. W.H. Han and K.J. Chang, “Quantum Spin Hall-like Phononic States in van der Waals Bilayers with Antiferromagnetic Ordering”, arXiv (2019)
  3. G.-M. Kim, H.-J. Sung, W.H. Han, I.-H. Lee, and K.J. Chang, “Self-Encapsulation of Silicene in Cubic Diamond Si: Topological Semimetal in Covalent Bonding Networks” J.Phys.Chem.C 123, 1839 (2019)
  4. M. Kim, J. Kim, I.-H Lee, W.H.Han, Y.C. Park, W.Y. Kim, B. Kim, and J. Suh “Quantum transport properties of single-crystalline Ag2Se0.5Te0.5 nanowire as a new topological material”, Nanoscale (2019)
  5. T. H. Lee, J. W. Shim, Y. W. Kim, H.-J. Sung, J. S. Goo, W. H. Han, K. J. Chang and T. G. Kim submitted (2019).

2018

  1. H.-J. Sung, W. H. Han, I.-H. Lee, and K. J. Chang, “Superconducting open-framework allotrope of silicon at ambient pressure”, Phys. Rev. Lett. 120, 157001 (2018)
  2. J.E. Wang, W.H. Han, K.J. Chang, Y.H. Jung, and D.K. Kim, “New insight into Na intercalation with Li substitution on alkali site and high performance of O3-type layered cathode material for sodium ion batteries” J. Mater. Chem. A 6, 22731 (2018).

2017

  1. W. H. Han, Y. J. Oh, D.-H. Choe, S. Kim, I.-H. Lee, K. J. Chang, “Three-dimensional buckled honeycomb boron lattice with vacancies as an intermediate phase on the transition pathway from α-B to γ-B.”, NPG Asia Materials 9, e400 (2017).
  2. S. Kim, W. H. Han, I.-H. Lee, K. J. Chang, “Boron Triangular Kagome Lattice with Half-Metallic Ferromagnetism”, Sci. Rep. 7, 7279 (2017).
  3. S. Cho, S. H. Kang, H. S. Yu, H. W. Kim, W. Ko, S. W. Hwang, W. H. Han, D.-H. Choe, K. J. Chang, Y. H. Lee, H. Yang, S. W. Kim, “Te vacancy-driven superconductivity in orthorhombic molybdenum ditelluride.”, 2D Mater. 4, 021030 (2017).
  4. W. H. Han, S. Kim, I.-H. Lee, K. J. Chang, Prediction of Green Phosphorus with Tunable Direct Band Gap and High Mobility”“, J. Phys. Chem. Lett. 8, 4627 (2017).

2016

  1. W. H. Han and K, J. Chang, “Subgap States near the Conduction-Band Edge Due to Undercoordinated Cations in Amorphous In-Ga-Zn-O and Zn-Sn-O Semiconductors”, Phys. Rev. Applied 6, 044011 (2016).

2015

  1. W. H. Han, Young Jun Oh, Ji-Sang Park, and K. J. Chang, “Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior”, Phys. Rev. Applied. 3, 044008. (2015).